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Chemical Mechanical Polishing
The main goal of the CMP investigation is to develop theories, equations and boundary conditions for models, which provide an understanding of the underlying mechanisms of CMP processes. In particular, the efforts are focused on the problems of planarization of metals, oxide and nitride, and the effect of consumables such as pads, and slurries on planarization rates.
Possibilities of the team allow to model CMP with accounting for the following important phenomena inherent to any existing polishing system:
- Dependencies of the polishing rate on the properties of the pad, slurry and abrasive particles at different parameters of the CMP cycle.
- Polishing process taking into account effects of heating within the contact traces of abrasive particles associated with accelerated formation and removal of the monomolecular passivating films.
- Polishing process taking into account the kinetics of the chemical reactions at a metall-slurry interface, the thermofluctuation nature of the bond rupture and variations of the activation energy of the reactions under the action of the abrasive particles.
On the base of such investigation a know-how can be generated for improving the polishing uniformity and rate by slight modifications to the CMP regimes and equipment, an interpretation of the CMP experimental results to derive performance dependence on process parameters, and practical recommendations on increasing process performance