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GaAs Devices |
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GaAs Devices Simulations
The
main goal of this research is to develop a world-class physical models,
numerical methods and high-level simulation toolsets for modeling physical
processes and calculating electrical characteristics in advanced
transistors' structures made from GaAs and related compound materials.
A set of advanced device models and numerical algorithms designed to handle semiconductor structures with homo- and heterojunctions, and a Monte Carlo particle tool for simulation of the electron transport in compound semiconductor materials have been created. Some of the constantly updated simulation features are:
- Self-consistent solving of Poisson’s equation, the electron and hole current continuity equation, as well as electron and hole energy-balance equations.
- Steady-state, small-signal and transient analysis.
- Multilayered, multicontact non-planar 2D structures with an arbitrary doping profile.
- Multiple materials support.
- Various numerical methods and algorithms.
The experience that went into this development can be applied to investigation, design and optimization of any advanced semiconductor devices such as field effect transistors, bipolar transistors, etc.
Capabilities
Two-dimensional GaAs Transistor Modeling
Threshold Voltage Characteristics Modeling