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GMR Effects |
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Giant Magnetoresistivity Effect and Spin Tunneling
The main goal of this activity is to develop insights into important characteristics of
GMR, so that it becomes possible to optimize GMR effecf and create structures with preferential properties. As the number of parameters in GMR system is substantial, achieving the formulated goal is only possible if advanced models and ancillary algorithms are developed and implemented.
Some of the features of the models being created by our GMR team are:
- Arbitrary external magnetic field.
- Different current orientations: the current-in-plane in the case of GMR effect and current-perpendicular-plane for GMR effect and spin tunneling.
- Arbitrary submicron thickness of ferromagnetic layers and spacers for multilayered structures.
- Arbitrary composition of 2- and 3-components alloys for magnetic layers.
- Determining interlayer interfaces' physical properties depending on electron spin.
These models can be applied to investigation, design and optimization of arbitrary Magnetic Random Access Memory cells of arbitrary shape.
CapabilitiesGMR and Spin Tunneling Effects Modeling -GMR effect in arbitrary multilayered thin film structures.