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Micromagnetic Modeling
Attractive features of Magnetic Random Access Memory (high dencity, non-volatile, low power consumption) combined with simpler and cheaper manufacturing are the main reasons for growing interest in MRAM cells. To maximize benefits of switching to MRAM technology and achieve best possible performance comprehensive understanding of MRAM underlying phenomena is required.
Our long experience with micromagnetic models enables simulation of magnetization configurations and switching processes of submicron multilayered thin film MRAM elements. For simulation to be of any practical value, besides sophisticated scientific background the following important parameters/possibilities should be available in the toolset:
Arbitrary number of magnetic and nonmagnetic layers with arbitrary shape. Magnetic defects due to interlayer exchange and anisotropy random variations. Effect of magnetic field pinning in any layer. Hysteresys loop generation. Magnetization distributions in different external magnetic fields as a data base for the GMR and spin tunneling simulations.
Models and tools, that SOFT-TEC MRAM team creates, can be used to investigate, design and optimize arbitrary multilayered thin film magnetic devices, for instance, sensors, spin-valves, reading heads etc.
CapabilitiesMagnetic RAM Modeling - magnetization configurations and switching processes of multilayered thin film structures of arbitrary shape.