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Quantum Devices |
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Quantum Device Modeling
The main goal of this development is to create and refine comprehensive physical models and software tools for calculation of electrical characteristics of semiconductor devices, whose operation principles are essentially based on the quantum effects. The developed physical models and numerical algorithms include:
- Self-consistent solution of Poisson's equation, Schrodinger's equation and the continuity equation.
- Intra- and interband tunneling processes, including scattering-assisted tunneling processes.
- Dependence of the tunneling probability on the carrier lateral wave vector.
- Multi-band description of material band structure.
- Band-bending in the spacer and contact layers.
- Variation of Fermi quasi-levels in the spacer and contact layers.
- Effects of series resistance.
The mentioned above models and methods can be designed into a software solution to simulate modern tunneling devices (interband and intraband multi-barrier resonant-tunneling diodes, interband p-n junction tunneling diodes, etc) made from various semiconductor compound materials.
The developed models and numerical methods are used to study, design and optimize advanced semiconductor devices based on various quantum-size effects.
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