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Process Modeling |
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Reliability Modeling |
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Interconnect Reliability |
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Device Modeling |
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Interconnect Reliability
In pursuit of higher Reliability there is a demand for better understanding of degradation phenomena. It is here that comprehensive physical models for simulation of lifetimes and failure processes in passivated metal interconnection lines and appropriate numerical algorithms come handy.
Skills of the team can be used to conceive and simulate:
- electromigration kinetics, mechanical stress evolution and void nucleation times in metal lines under AC/DC;
- fracture kinetics and metallization lifetime with accounting for effective ion charges in pure bulk metals and grain boundaries, as well as polycrystalline grain texture.
- multilevel metallization specific degradation mechanisms under stress and electromigraion, including fracture near the plug to metallization joints;
- influence of packaging stage effects on the interconnects lifetime;
Diversity and comprehensiveness of the Reliability team experience allows broad application of our skills. One such activity is aimed at achieving finer material structure, which takes modeling of recrystallization and annealing processes in microelectronics materials, deformations in polycrystalline thin films, and prediction of hillocks formation and their effects on the lifetime.