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Si Devices |
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Silicon Devices
The main goal of the direction is to create a world-class high-level simulation tool for simulating physical processes and calculating electrical characteristics in advanced deep sub-micrometer silicon-based transistors' structures. The main effort is spent on development of the models applicable for simulation of MOS-like field effect transistors as well as bipolar transistors.
Simulation options include:
- Self-consistent solving Poisson's equation, the electron and hole energy balance equations, the electron and hole current continuity equation.
- Steady-state, small-signal and transient analysis.
- Carrier energy-dependent transport coefficients for electrons and holes.
- Band gap narrowing due to heavy doping
- Multilayer, multicontact non-planar 2D structures with an arbitrary doping profile.
- Supporting multiple materials.
- Various advanced numerical methods and algorithms.
The achieved results could be applied to investigation, design and optimization of advanced semiconductor devices based on Si and SiGe systems.